International Symposium on Telecommunication (IST)

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Design and Implementation of a High-Efficiency 5W Ku-Band Power Amplifier Using a Bare Die GaN HEMT for Satellite Uplink Applications

Authors :

Ehsan Rafiei¹ Amin Azimi² Vahid Nayyeri³ Roghieh Karimzadeh Baee⁴

1- Iran University of Science and Technology 2- Iran University of Science and Technology 3- Iran University of Science and Technology 4- ICT Research Institute (ITRC)

Keywords :

Bare die GaN HEMT،power amplifier،Ku-band،wirebonding

Abstract :

This paper presents a Ku-band 5W Power Amplifier (PA) using a bare die Gang high electron mobility transistor (HEMT). The circuit was implemented using microwave-integrated circuit (MIC) technology. Wirebonds have been implemented using 25-micron gold wire on a Rogers 4003C substrate with a thickness of 0.1 mm. Simulation modeling of wirebonds was validated using passive test circuits. Experimental results demonstrate that the PA operates in the 12.5 to 13.5 GHz frequency range, with output power, drain efficiency, and gain of higher than 5W, 40%, and 5 dB, respectively under continuous wave (CW) operation, which is suitable for uplink satellite communication applications.